• Uluslararası Hakemli Dergilerde Yayımlanan Makaleler
• 1 ALTINDAL ŞEMSETTİN, ÖZDEMİR AHMET FARUK, AYDOĞAN ŞAKİR, TURUT ABDULMECİT, Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Doi: 10.1007/s10854-022-08181-1, (2022), (SCI-Expanded)
• 2 LAPA Havva Elif, KÖKCE ALİ, ALDEMİR DURMUŞ ALİ, ÖZDEMİR AHMET FARUK, The response of high barrier Schottky diodes to light illumination. Journal of Materials Science: Materials in Electronics Doi: 10.1007/s10854-020-05186-6, (2021), (SCI-Expanded)
• 3 GÜÇLÜ ÇİĞDEM Ş, ÖZDEMİR AHMET FARUK, ALDEMİR DURMUŞ ALİ, ALTINDAL ŞEMSETTİN, The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K. Journal of Materials Science: Materials in Electronics Doi: 10.1007/s10854-021-05284-z, (2021), (SCI-Expanded)
• 4 ÖZDEMİR AHMET FARUK, GÖKSU TUNA, YILDIRIM NEZİR, TURUT ABDULMECİT, Effects of measurement temperature and metal thickness on Schottky diode characteristics. Physica B: Condensed Matter Doi: 10.1016/j.physb.2021.413125, (2021), (SCI-Expanded)
• 5 LAPA Havva Elif, GÜÇLÜ ÇİĞDEM Ş, ALDEMİR DURMUŞ ALİ, ÖZDEMİR AHMET FARUK, The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height. Applied Physics A, 126(6), (2020), (SCI-Expanded)
• 6 ALDEMİR DURMUŞ ALİ, LAPA Havva Elif, ÖZDEMİR AHMET FARUK, UÇAR NAZIM, Doğal Oksit Arayüzey Tabakalı Zr/p-Si Schottky Diyotlarının YüksekFrekanslarda Kapasite-Gerilim ve İletkenlik-Gerilim Karakteristiklerinin Analizi. Bitlis Eren Üniversitesi Fen Bilimleri Dergisi (2020), (TR DİZİN)
• 7 LAPA Havva Elif, KÖKCE ALİ, ALDEMİR DURMUŞ ALİ, ÖZDEMİR AHMET FARUK, ALTINDAL ŞEMSETTİN, The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer. PHYSICA SCRIPTA, 95(11), (2020), (SCI-Expanded)
• 8 Al Dharob M Hussein, KÖKCE ALİ, ALDEMİR DURMUŞ ALİ, ÖZDEMİR AHMET FARUK, ALTINDAL ŞEMSETTİN, The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements. Journal of Physics and Chemistry of Solids (2020), (SCI-Expanded)
• 9 LAPA Havva Elif, KÖKCE ALİ, ALDEMİR DURMUŞ ALİ, ÖZDEMİR AHMET FARUK, ALTINDAL ŞEMSETTİN, Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes. INDIAN JOURNAL OF PHYSICS Doi: 10.1007/s12648-019-01644-y, (2020), (SCI-Expanded)
• 10 GÜÇLÜ ÇİĞDEM Ş, ÖZDEMİR AHMET FARUK, KÖKCE ALİ, KARABULUT ABDULKERİM, ALTINDAL ŞEMSETTİN, Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs). Materials Science in Semiconductor Processing , 26-31. Doi: 10.1016/j.mssp.2018.08.019, (2019), (SCI-Expanded)
• 11 LAPA Havva Elif, KÖKCE ALİ, ÖZDEMİR AHMET FARUK, ALTINDAL ŞEMSETTİN, Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method. Zeitschrift für Physikalische Chemie, 0(0), Doi: 10.1515/zpch-2017-1091, (2019), (SCI-Expanded)
• 12 LAPA Havva Elif, KÖKCE ALİ, ÖZDEMİR AHMET FARUK, Investigation of Electrical Characteristics of Yb/p-Si Schottky Diodes. Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi , 1385-1394. Doi: 10.21597/jist.537844, (2019), (TR DİZİN)
• 13 GÜÇLÜ ÇİĞDEM Ş, ÖZDEMİR AHMET FARUK, ALDEMİR DURMUŞ ALİ, Mo/n-Si Schottky Diyotların Akım-Voltaj ve Kapasite-Voltaj Karakteristiklerinin Analizi. Düzce Üniversitesi Bilim ve Teknoloji Dergisi, 7(3), , 2142-2155. Doi: 10.29130/dubited.544197, (2019), (TR DİZİN)
• 14 ALDEMİR DURMUŞ ALİ, ALDEMİR Rukiye, KÖKCE ALİ, ÖZDEMİR AHMET FARUK, DUMAN SONGÜL, The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes. Silicon, 11(6), , 2647-2657. Doi: 10.1007/s12633-018-0054-3, (2018), (SCI-Expanded)
• 15 Al Dharob M Hussein, LAPA Havva Elif, KÖKCE ALİ, ÖZDEMİR AHMET FARUK, ALDEMİR DURMUŞ ALİ, ALTINDAL ŞEMSETTİN, The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (IVT) measurements. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018), (SCI)
• 16 LAPA Havva Elif, KÖKCE ALİ, ÖZDEMİR AHMET FARUK, USLU İBRAHİM, ALTINDAL ŞEMSETTİN, A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods. BULLETIN OF MATERIALS SCIENCE (2018), (SCI-Expanded)
• 17 Lapa Havva Elif, KÖKCE ALİ, AlDAHROB Mohammad Hussein Ali, ORAK İKRAM, ÖZDEMİR AHMET FARUK, ALTINDAL ŞEMSETTİN, Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/ in/i -4H-SiC (MPS) structures at room temperature/title. The European Physical Journal Applied Physics, 80(1), Doi: 10.1051/epjap/2017170147, (2017), (SCI-Expanded)
• 18 UÇAR NAZIM, Turku Nursel, ÖZDEMİR AHMET FARUK, ÇALIK ADNAN, Boriding of Binary Ni Ti and Ternary Ni Ti Cu Shape Memory Alloys. Acta Physica Polonica A, 130(1), , 492-495. Doi: 10.12693/APhysPolA.130.492, (2016), (SCI-Expanded)
• 19 GÜÇLÜ Çiğdem Ş, ÖZDEMİR AHMET FARUK, ALTINDAL ŞEMSETTİN, Frequency and Voltage Dependent Dielectric Properties and AC Electrical Conductivity of Au Ti Al2O3 n GaAs with Thin Al2O3 Interfacial Layer at Room Temperature. Acta Physica Polonica A, 130(1), , 325-330. Doi: 10.12693/APhysPolA.130.325, (2016), (SCI-Expanded)
• 20 GÜÇLÜ Çiğdem Ş, ÖZDEMİR AHMET FARUK, ALTINDAL ŞEMSETTİN, Double exponential I V characteristics and double Gaussian distribution of barrier heights in Au Ti Al2O3 n GaAs MIS type Schottky barrier diodes in wide temperature range. Applied Physics A, 122(12), Doi: 10.1007/s00339-016-0558-x, (2016), (SSCI)
• 21 ALDEMİR Durmuş Ali, Kökce Ali, Karataş Selda, ÖZDEMİR Ahmet Faruk, Esen Mustafa, Analysis of current voltage and capacitance voltage frequency characteristics in Al p Si Schottky diode with the polythiophene SiO2 nanocomposite interfacial layer. Thin Solid Films, 519(18), , 6004-6009. Doi: 10.1016/j.tsf.2011.04.011, (2011), (SCI-Expanded)
• 22 UÇAR NAZIM, ÖZDEMİR AHMET FARUK, ALDEMİR DURMUŞ ALİ, ÇANKAYA GÜVEN, Time Dependence of Current Voltage Characteristics of Pb p Si Schottky Diode under Hydrostatic Pressure. Zeitschrift für Naturforschung A , 576-580. Doi: 10.5560/ZNA.2011-0005, (2011), (SCI-Expanded)
• 23 AKKURT İSKENDER, AKYILDIRIM HAKAN, ÖZDEMİR AHMET FARUK, ALDEMİR DURMUŞ ALİ, Neutron irradiation effects on I V characteristics of Au n GaAs Schottky diodes. Radiation Measurements, 45(10), , 1381-1383. Doi: 10.1016/j.radmeas.2010.06.040, (2010), (SCI-Expanded)
• 24 ÖZDEMİR Ahmet Faruk, Kotan Z., ALDEMİR Durmuş Ali, Altndal S., The effects of the temperature on I V and C V characteristics of Al P2ClAn C2H5COOH p Si Al structure. The European Physical Journal Applied Physics, 46(2), , 20402-0. Doi: 10.1051/epjap/2009035, (2009), (SCI-Expanded)
• 25 ÖZDEMİR AHMET FARUK, ÇALIK ADNAN, ÇANKAYA GÜVEN, ŞAHİN OSMAN, UÇAR NAZIM, Effect of Indentation on I V Characteristics of Au n GaAs Schottky Barrier Diodes. Zeitschrift für Naturforschung A , 199-202. Doi: 10.1515/zna-2008-3-414, (2008), (SCI-Expanded)
• 26 ÖZDEMİR Ahmet Faruk, Gök Ayşegül, Türüt Abdülmecit, The electrical measurements in poly 2 chloroaniline based thin film sandwich devices. Thin Solid Films, 515(18), , 7253-7258. Doi: 10.1016/j.tsf.2007.02.104, (2007), (SCI-Expanded)
• 27 ÖZDEMİR AHMET FARUK, TURUT ABDULMECİT, KÖKCE ALİ, The double Gaussian distribution of barrier heights in Au n GaAs Schottky diodes from I V T characteristics. Semiconductor Science and Technology, 21(3), , 298-302. Doi: 10.1088/0268-1242/21/3/016, (2006), (SCI-Expanded)
• 28 ÖZDEMİR AHMET FARUK, KÖKCE ALİ, TURUT ABDULMECİT, The interface state energy distribution from capacitance frequency characteristics of gold n type Gallium arsenide Schottky barrier diodes exposed to air. Thin Solid Films , 210-215. Doi: 10.1016/S0040-6090(02)01140-9, (2003), (SCI-Expanded)
• 29 ÖZDEMİR AHMET FARUK, KÖKCE ALİ, TURUT ABDULMECİT, The effects of the time dependent and exposure time to air on Au n GaAs schottky barrier diodes. Applied Surface Science , 188-195. Doi: 10.1016/S0169-4332(02)00181-2, (2002), (SCI-Expanded)

• Ulusal Hakemli Dergilerde Yayımlanan Makaleler
• 1 ALDEMİR DURMUŞ ALİ, KÖKCE ALİ, ÖZDEMİR AHMET FARUK, Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması // The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range. SAÜ Fen Bilimleri Enstitüsü Dergisi, 21(6), , 1286-1292. Doi: 10.16984/saufenbilder.279996, (2017), (TR DİZİN)